IGI60F1414A1L half-bridge equivalent, ips / 600v gan half-bridge.
* Two 140 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A - Applica.
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IGI60F1414A1L combines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 600 V enhancementm.
IGI60F1414A1L combines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the low-to-medium power area (example application in Fig.
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