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IGI60F1414A1L Datasheet, Infineon

IGI60F1414A1L half-bridge equivalent, ips / 600v gan half-bridge.

IGI60F1414A1L Avg. rating / M : 1.0 rating-11

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IGI60F1414A1L Datasheet

Features and benefits


* Two 140 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A - Applica.

Application

Description IGI60F1414A1L combines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 600 V enhancementm.

Description

IGI60F1414A1L combines a half-bridge power stage consisting of two 140 m (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the low-to-medium power area (example application in Fig.

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TAGS

IGI60F1414A1L
IPS
600V
GaN
half-bridge
IGI60F2020A1L
IGI60F2727A1L
IGI60F5050A1L
Infineon

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