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IGC76T65T8RM - IGBT

General Description

Recommended for power modules Type IGC76T65T8RM Die size 7.87 mm x 9.69 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-28 IGC76T65T8RM IGBT3 Chip Medium Power Table

Key Features

  • VCES = 650 V.
  • ICn = 150 A.
  • 650 V trench & field stop technology.
  • High short circuit capability, self limiting short circuit current.
  • Positive temperature coefficient.
  • Easy paralleling Potential.

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IGC76T65T8RM IGBT3 Chip Medium Power Features • VCES = 650 V • ICn = 150 A • 650 V trench & field stop technology • High short circuit capability, self limiting short circuit current • Positive temperature coefficient • Easy paralleling Potential applications • Drives Product validation • Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22 Description • Recommended for power modules Type IGC76T65T8RM Die size 7.87 mm x 9.69 mm Delivery form Sawn on foil Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.