Datasheet4U Logo Datasheet4U.com

IGC31T65QE - IGBT

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 IGC31T65QE Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Techn

Features

  • 650V Trench & Field Stop technology.
  • high speed switching series third generation.
  • low VCE(sat).
  • low EMI.
  • low turn-off losses.
  • positive temperature coefficient.
  • qualified according to JEDEC for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description
IGC36T120T6L IGBT
IGC36T120T8L IGBT
IGC39T65QE High Speed IGBT3
IGC39T65T8M IGBT
IGC019S06S1 60V Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Speed IGBT3 Chip IGC31T65QE Features:  650V Trench & Field Stop technology  high speed switching series third generation  low VCE(sat)  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target applications Recommended for:  discrete components and modules Applications:  uninterruptible power supplies  welding converters  converters with high switching frequency C G E Chip Type VCE ICn1) Die Size Package IGC31T65QE 650V 60A 6.67 x 4.69 mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size Gate pad size 6.67 x 4.69 See chip drawing 0.446 x 0.722 mm2 Area total Thickness Wafer size Max.