* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

* Breakdown voltage tested at 35 mA2) 3)
* Optimized for high temperature operation Benefits
* System effici.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all loa.

IDW30C65D1

IDW30C65D2

IDW30E60

IDW30E65D1

IDW30G120C5B

IDW30G65C5

IDW100E60

IDW10G120C5B

IDW10G65C5

IDW12G65C5

IDW15E65D2

IDW15G120C5B

IDW16G65C5

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