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IDDD06G65C6 Datasheet

650V SiC Schottky Diode

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IDDD06G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier
diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further
advancements like a novel Schottky metal system. The result is a family of products with improved efficiency
over all load conditions, resulting from a lower figure of merit (Qc x VF . The CoolSiC™ Schottky diode V G
has been designed to complement our V and V CoolMOS™ families, meeting the most stringent
application requirements in this voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM 650 V
QC (VR = 400 V)
9.6
nC
EC (VR = 400 V)
IF (TC 0 °C, D = 1)
1.6
6
µJ
A
VF (IF = 6 A, Tj = 25 °C)
1.25
V
Table 2
Package information
Type / ordering Code Package
IDDD06G65C6
PG-HDSOP-10-1
Marking
D0665C6
PG-HDSOP-10-1
Cathode
Pin 6-10
Pin 3-5
Pin 1-2: n.c.
Pin 3-5: Anode
Pin 6-10: Cathode
Features
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS
Solar inverter
Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
Final Datasheet
Please read the Important Notice and Warnings at the end of this document
Rev. 2.0, 2018-02-06


Infineon Technologies Electronic Components Datasheet

IDDD06G65C6 Datasheet

650V SiC Schottky Diode

No Preview Available !

6th Generation CoolSiCTM
IDDD06G65C6
Table of Content
1 Maximum ratings ...............................................................................................................................3
2 Thermal characteristics .....................................................................................................................3
3 Electrical characteristics ....................................................................................................................4
3.1 Static characteristics...............................................................................................................................4
3.2 AC characteristics ....................................................................................................................................4
4 Diagrams............................................................................................................................................5
5 Simplified forward characteristic.......................................................................................................7
6 Package outlines................................................................................................................................8
Final Datasheet
2 Rev. 2.0 , 2018-02-06


Part Number IDDD06G65C6
Description 650V SiC Schottky Diode
Maker Infineon
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IDDD06G65C6 Datasheet PDF






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