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H30R1353 - IGBT

Description

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Features

  • Offers new higher breakdown voltage to 1350V for improved reliability.
  • Powerful monolithic body diode with low forward voltage designed for soft commutation only.

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Datasheet preview – H30R1353

Datasheet Details

Part number H30R1353
Manufacturer Infineon
File Size 1.90 MB
Description IGBT
Datasheet download datasheet H30R1353 Datasheet
Additional preview pages of the H30R1353 datasheet.

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Full PDF Text Transcription

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ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N135R3 Datasheet IndustrialPowerControl IHW30N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogenfree(accordingtoIEC61249-2-21) •CompleteproductspectrumandPSp
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