ring, MSL1)
Symbol VCE IC
ICpuls -
VGE Ptot
Tj , Tstg -
Value
Unit
1200
V
A
9.6 3.9
9.9 9.9
±20
V
62.5
W
-40...+150
°C
245
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 Oct. 07
IGB03N120H2
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction
–.