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IGA03N120H2
HighSpeed 2-Technology
• Designed for:
- TV – Horizontal Line Deflection
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DataSheet4U.comVC E
Triangular collector peak current (VGS = 15V)
ICpk
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
VGE
Power dissipation
Ptot
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
Value
1200
8.2
9
9
±20
29
-40...+150
260
Unit
V
A
V
W
°C
DataShee
DataSheet4U.com
Power Semiconductors
DataSheet4 U .com
1
Mar-04, Rev. 2.0
