FS25R12W1T4_B11 Datasheet | Infineon

Features - Low Switching Losses - Low VCEsat - Trench IGBT4 - VCEsatwithpositive Temperature Coefficient Mechanical Features - Al2O3Substratewith Low Thermal Resistance - pactdesign - Press FITContact Technology - Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code128 DMX-Code preparedby:DK approvedby:MB Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-11-05 revision:2.0 ULapproved(E83335) Technische Information/Technical Information IGBT-Module IGBT-modules IGBT,Wechselrichter/IGBT,Inverter Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Continuous DCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage Vorläufige Daten Preliminary Data VCES IC nom IC ICRM Ptot VGES 1200 25 45...