* 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 - High-endurance 10 trillion (1014) read/writes - 121-year data retention (See th.

requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critica.

The FM25V20A is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years wh.

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