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FF450R33T3E3 - IGBT

Description

Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module Table of contents Table of contents Description

Features

  • Electrical features - VCES = 3300 V - IC nom = 450 A / ICRM = 900 A - Low switching losses - High DC stability - High short-circuit capability - Low VCE,sat - Tvj,op = 150°C - Unbeatable robustness - VCE,sat with positive temperature coefficient.
  • Mechanical features - AlSiC base plate for increased thermal cycling capability - Isolated base plate - Package with CTI > 600 Potential.

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FF450R33T3E3 XHP™3 module XHP™3 module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 3300 V - IC nom = 450 A / ICRM = 900 A - Low switching losses - High DC stability - High short-circuit capability - Low VCE,sat - Tvj,op = 150°C - Unbeatable robustness - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - Isolated base plate - Package with CTI > 600 Potential applications • Medium-voltage converters • Motor drives • Traction drives • UPS systems • Wind turbines Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.
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