FF1000R17IE4P
FF1000R17IE4P is IGBT manufactured by Infineon.
Features
- Highshort-circuitcapability
- Highsurgecurrentcapability
- Highcurrentdensity
- Lowswitchinglosses
- Tvjop=150°C
- VCEsatwithpositivetemperaturecoefficient
Mechanical Features
- 4k VAC1mininsulation
- Packagewith CTI>400
- Highcreepageandclearancedistances
- Integrated NTCtemperaturesensor
- Ro HSpliant
- Pre-applied Thermal Interface Material
Module Label Code
Barcode Code128
DMX-Code preparedby:SM approvedby:RN
Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week)
Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2016-09-07 revision:V3.2
ULapproved(E83335)
Technische Information/Technical Information
IGBT-Modul IGBT-Module
IGBT,Wechselrichter/IGBT,Inverter
Höchstzulässige Werte/Maximum Rated Values
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom Continuous DCcollectorcurrent
TH = 60°C, Tvj max = 175°C
Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES IC nom ICRM VGES
1700 1000 2000 +/-20
V A A V
Charakteristische Werte/Characteristic Values
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 1000 A, VGE = 15 V IC = 1000 A, VGE = 15 V IC = 1000 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C Tvj = 150°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 36,0 m A, VCE = VGE, Tvj =...
