* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

* Breakdown voltage tested at 88 mA2)
* Optimized for high temperature operation Benefits
* System efficienc.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulti.

D4066B

D40

D40-10

D40-11

D40-11B

D40-12

D40-13

D40-20

D40-21

D40-21B

D40-22

D40-23

D40-30

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