* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

* Breakdown voltage tested at 66 mA2)
* Optimized for high temperature operation Benefits
* System efficienc.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resultin.

D30-11

D30-11B

D30-12

D30-13

D30-14

D30-15

D30-16

D30-17

D30-18

D30-19

D30-21

D30-21B

D30-22

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