D1665C5
Description
Thin Q!™ Generation 5 represents Infineon leading edge technology for the Si C Schottky Barrier diodes. Thanks to the more pact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thin Q!™ Generation 5 has been designed to plement our 650V Cool MOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Features
- Revolutionary semiconductor material
- Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Breakdown voltage tested at 35 m A2)
- Optimized for high temperature operation
Benefits
- System efficiency improvement over Si diodes
- System cost / size savings...
