D1265C5 diodes equivalent, sic schottky barrier diodes.
* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independ.
* Breakdown voltage tested at 27 mA2)
* Optimized for high temperature operation
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ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulti.
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