* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

* Breakdown voltage tested at 22 mA2)
* Optimized for high temperature operation Benefits
* System efficienc.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resultin.

D1065

D1060

D1061

D1062

D1063

D1064

D1067

D1069

D106C

D10

D10-10

D10-11

D10-13

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