D1065C5 Datasheet Sic Schottky Barrier Diodes

Manufacturer: Infineon

Overview: SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW10G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ!

Datasheet Details

Part number	D1065C5
Manufacturer	Infineon
File Size	1.14 MB
Description	SiC Schottky Barrier diodes
Datasheet	D1065C5-Infineon.pdf

General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Key Features

Revolutionary semiconductor material - Silicon Carbide.
Benchmark switching behavior.
No reverse recovery/ No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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