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BSZ22DN20NS3G - Power MOSFET

Features

  • Optimized for dc-dc conversion.
  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Low on-resistance R DS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSZ22DN20NS3 G Product Summary VDS RDS(on),max ID 200 V 225 mW 7A PG-TSDSON-8 Type BSZ22DN20NS3 G Package Marking PG-TSDSON-8 22DN20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) Avalanche energy, single pulse I D,pulse E AS T C=100 °C T C=25 °C I D=3.
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