BSZ110N08NS5 transistor equivalent, metal oxide semiconductor field effect transistor.
*Idealforhighfrequencyswitchingandsync.rec.
*OptimizedtechnologyforDC/DCconverters
*ExcellentgatechargexRDS(on)product(FOM)
*Verylow.
*Halogen-freeaccordingtoIEC61249-2-21
*Highersolderjointreliabilitywithenlargedsourceinterconnection.
Features
*Idealforhighfrequencyswitchingandsync.rec.
*OptimizedtechnologyforDC/DCconverters
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowon-resistanceRDS(on)
*N-channel,normallevel
*100%avalan.
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