BSZ042N06NS - 60V MOSFET

Description

Features

Optimized for high performance SMPS, e. g. sync. rec.
100% avalanche tested.
Superior thermal resistance.
N-channel.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	BSZ042N06NS
Manufacturer	Infineon
File Size	974.12 KB
Description	60V MOSFET
Datasheet	BSZ042N06NS Datasheet

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BSZ042N06NS MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 4.2 mΩ ID 98 A QOSS 32 nC QG(0V..10V) 27 nC TSDSON-8FL(S3O8) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ042N06NS Package PG-TSDSON-8 FL Marking 042N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Dec 18, 2013 |