The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile (<0.5 mm) • Double side cooling • N-channel • 100% avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC1) for target applications
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
BSN012N03LS
30 V 1.