900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

BSC052N03LS Datasheet

n-Channel Power MOSFET

No Preview Available !

OptiMOSTM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Very low on-resistance R DS(on) @ V GS=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
QGD
QG(0V..10V)
BSC052N03LS
30 V
5.2 mW
57 A
1.9 nC
12 nC
PG-TDSON-8
Type
BSC052N03LS
Package
PG-TDSON-8
Marking
052N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
V GS
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 W
Value
57
36
48
31
17
228
35
12
±20
Unit
A
mJ
V
Rev. 2.2
page 1
2013-05-14


Infineon Technologies Electronic Components Datasheet

BSC052N03LS Datasheet

n-Channel Power MOSFET

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC052N03LS
Value
28
2.5
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Device on PCB
R thJA
top
6 cm2 cooling area2)
-
-
-
- 4.5 K/W
- 20
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=250 µA
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
30
1.2
-
-
-
0.1
-V
2
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=30 A
V GS=10 V, I D=30 A
RG
- 10 100 nA
- 5.8 7.2 mW
- 4.3 5.2
0.3 0.65 1.3 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
38
75
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 2.2
page 2
2013-05-14


Part Number BSC052N03LS
Description n-Channel Power MOSFET
Maker Infineon
PDF Download

BSC052N03LS Datasheet PDF






Similar Datasheet

1 BSC052N03LS n-Channel Power MOSFET
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy