BSC052N03LS
Description
1 Final Data Sheet 2 Rev.2.4,2023-03-31 OptiMOSTMPower-MOSFET,30V BSC052N03LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID,pulse IAS EAS VGS Ptot Tj,Tstg Min.
Key Features
- Verylowon-resistanceRDS(on)@VGS=4.5V
- 100%avalanchetested
- Superiorthermalresistance
- N-channel,logiclevel
- Optimizedforhighperformancebuckconverter
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
