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BSC009N04LSSC - 40V MOSFET

Description

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Features

  • Dual-side cooled package with lowest junction-top thermal resistance.
  • Optimized for sychronous rectification.
  • 175 °C rated.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC009N04LSSC MOSFET OptiMOSTMPower-MOSFET,40V Features •Dual-sidecooledpackagewithlowestjunction-topthermalresistance •Optimizedforsychronousrectification •175°Crated •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 0.94 mΩ ID 301 A Qoss 84 nC Qg(0V..
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