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Infineon Technologies Electronic Components Datasheet

BSB053N03LPG Datasheet

Power MOSFET

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BSB053N03LP G
OptiMOSTM2 Power-MOSFET
Features
• Pb-free plating; RoHS compliant
• Dual sided cooling
• Low profile (<0.7 mm)
Product Summary
V DS
R DS(on),max
ID
30
5.3
71
• 100% avalanche tested
• Qualified for consumer level application
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
MG-WDSON-2
• Optimized for high switching frequency DC/DC converter
• Low parasitic inductance
• Compatible with DirectFET® package MP footprint and outline 1)
V
m
A
Type
BSB053N03LP G
Package
MG-WDSON-2
Outline
MP
Marking
3003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
71 A
V GS=10 V, T C=100 °C
45
V GS=10 V, T A=25 °C,
R thJA=55 K/W2)
17
Pulsed drain current3)
Avalanche current, single pulse4)
I D,pulse
I AS
T C=25 °C
T C=25 °C
284
50
Avalanche energy, single pulse
E AS I D=44 A, R GS=25
75 mJ
Gate source voltage
V GS
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
Free Datasheet http://www.datasheet4u.com/


Infineon Technologies Electronic Components Datasheet

BSB053N03LPG Datasheet

Power MOSFET

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=55 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSB053N03LP G
Value
42
2.3
-40 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC bottom
- 1.0
K/W
top 3
Device on PCB
R thJA 6 cm2 cooling area2)
-
- 55
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=25 A
-
7.1 8.9 m
V GS=10 V, I D=30 A
- 4.4 5.3
Gate resistance
RG
- 0.5 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
32
65
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 2.0
page 2
2009-05-11
Free Datasheet http://www.datasheet4u.com/


Part Number BSB053N03LPG
Description Power MOSFET
Maker Infineon
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BSB053N03LPG Datasheet PDF






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