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Infineon Technologies Electronic Components Datasheet

BSB044N08NN3G Datasheet

n-Channel Power MOSFET

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BSB044N08NN3 G
OptiMOS3 Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• Dual sided cooling
• low parasitic inductance
Product Summary
VDS
RDS(on),max
ID
80
4.4
90
CanPAKTM M
MG-WDSON-2
• Low profile (<0.7mm)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Compatible with DirectFET® package MN footprint and outline2)
V
mW
A
Type
BSB044N08NN3 G
Package
MG-WDSON-2
Outline
MN
Marking
0208
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D V GS=10 V, T C=25 °C
90
V GS=10 V, T C=100 °C
68
V GS=10 V, T A=25 °C,
R thJA=58 K/W2)
18
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS I D=30 A, R GS=25 W
660
Gate source voltage
V GS
±20
1) J-STD20 and JESD22
2) DirectFET® is a trademark of International Rectfier Corporation
BSB028N06NN3 G uses DirectFET® technology licensed from International Rectifier Corporation
Unit
A
mJ
V
Rev. 2.0
page 1
2011-07-18


Infineon Technologies Electronic Components Datasheet

BSB044N08NN3G Datasheet

n-Channel Power MOSFET

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=58 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSB044N08NN3 G
Value
78
2.2
-40 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC bottom
- 1.0 - K/W
top - - 1.6
Device on PCB
R thJA 6 cm2 cooling area2)
-
- 58
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
80
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=97 µA 2 2.8 3.5
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1 10 µA
V DS=80 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=30 A
- 3.7 4.4
Gate resistance
RG
- 0.5 - W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
36
72
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 2.0
page 2
2011-07-18


Part Number BSB044N08NN3G
Description n-Channel Power MOSFET
Maker Infineon
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