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Infineon Technologies Electronic Components Datasheet

BSB029P03NX3 Datasheet

n-Channel Power MOSFET

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n-Channel Power MOSFET
OptiMOS™
BSB029P03NX3
Data Sheet
1.92, 2011-03-21
Preliminary
Industrial & Multimarket
Free Datasheet http://www.datasheet4u.com/


Infineon Technologies Electronic Components Datasheet

BSB029P03NX3 Datasheet

n-Channel Power MOSFET

No Preview Available !

OptiMOS™ Power-MOSFET
BSB029P03NX3 G
1 Description
OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for
highest power density and energy efficient solutions. Lowest on state resistance
in small footprint packages make OptiMOS™ P3 -30V the best choice for the
demanding requirements of load switch, high-side switch and battery
management applications. OptiMOS™ P3 products are available in high
performance packages to tackle your most challenging applications giving full
flexibility in optimizing space, efficiency and cost.
Features
P-Channel MOSFET
• Very low on-resistance RDS(on)
• Qualified for consumer level application
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Double sided cooling
• Compatible with DirectFET® package MX footprint and outline1)
• 100% avalanche tested
• Low parasitic inductance
• Low profile (<0.7 mm)
Applications
• Load switch
• High-side switch
• Battery management
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
RDS(on),max
ID
QOSS
Qg.typ
-30
2.9
137
106
66
V
mΩ
A
nC
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Type
BSB029P03LX3 G
Package
MG-WDSON-2
Marking
5103
1) DirectFET ® is a trademark of International Rectifier Corporation. BSB027P03LX3 G uses DirectFET ® technology
licensed from International Rectifier Corporation
Preliminary Data Sheet
1
1.92, 2011-03-21
Free Datasheet http://www.datasheet4u.com/


Part Number BSB029P03NX3
Description n-Channel Power MOSFET
Maker Infineon
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