BSB024N03LXG
BSB024N03LXG is Power MOSFET manufactured by Infineon.
BSB024N03LX G
OptiMOSTM2 Power-MOSFET
Features
- Pb-free plating; RoHS pliant
- Dual sided cooling
- Low profile (<0.7 mm)
- 100% avalanche tested
- Qualified for consumer level application
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Optimized for high switching frequency DC/DC converter
- Low parasitic inductance
Product Summary V DS R DS(on),max ID 30 2.4 145 V mΩ A
MG-WDSON-2
- patible with DirectFET® package MX footprint and outline 1)
Type BSB024N03LX G
Package MG-WDSON-2
Outline MX
Marking 0603
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V...
