Datasheet4U Logo Datasheet4U.com

BSB017N03LX3G - n-Channel Power MOSFET

Description

OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions.

Features

  • Optimized for high switching frequency DC/DC converter.
  • 100% avalanche tested.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSB01703HA3-00CAJ DC FAN DELTA
BSB01503HA3-00CGE DC FAN DELTA
BSB0203HA3-00CER DC FAN DELTA
BSBE1 RF unit ALPS
BSBE2 DVB-S2 Digital BS Tuner Unit ALPS ELECTRIC

Other Datasheets by Infineon

Part Number Description
BSB017N03LX3 n-Channel Power MOSFET
BSB012N03LX3G Power MOSFET
BSB012NE2LX n-Channel Power MOSFET
BSB012NE2LXI MOSFET
BSB013NE2LXI n-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
n-Channel Power MOSFET OptiMOS™ BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB017N03LX3 G 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost.
Published: |