900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

BSB013NE2LXI Datasheet

n-Channel Power MOSFET

No Preview Available !

BSB013NE2LXI
OptiMOSTM Power-MOSFET
Features
• Optimized SyncFET for high performance Buck converter
• Integrated monolithic Schottky like diode
• Low profile (<0.7 mm)
• 100% avalanche tested
• 100% R G Tested
Product Summary
VDS
RDS(on),max
ID
Qoss
Qg(0V..10V)
25
1.3
163
39
62
• Double-sided cooling
• Compatible with DirectFET® package MX footprint and outline 1)
• Qualified according to JEDEC2) for target applications
CanPAKTM M
MG-WDSON-2
• Pb-free lead plating; RoHS compliant
V
mW
A
nC
nC
Type
BSB013NE2LXI
Package
MG-WDSON-2
Outline
MX
Marking
02E2
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
163 A
V GS=10 V, T C=100 °C
103
V GS=10 V, T A=25 °C,
R thJA=45 K/W3)
36
Pulsed drain current4)
Avalanche current, single pulse5)
I D,pulse
I AS
T C=25 °C
T C=25 °C
400
40
Avalanche energy, single pulse
Gate source voltage
E AS
V GS
I D=40 A, R GS=25 W
130 mJ
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a
registered trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) See figure 3 for more detailed information
5) See figure 13 for more detailed information
Rev. 2.4
page 1
2013-02-12


Infineon Technologies Electronic Components Datasheet

BSB013NE2LXI Datasheet

n-Channel Power MOSFET

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=45 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSB013NE2LXI
Value
57
2.8
-40 … 150
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC bottom
- 1.0 - K/W
top - - 2.2
Device on PCB
R thJA 6 cm2 cooling area3)
-
- 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=10 mA
25
-
-V
Breakdown
voltage
temperature
coefficd/dieVTn(Bjt R)DSS
I D=10 mA,
to 25 °C
referenced
-
15
- mV/K
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1.2
-
2V
Zero gate voltage drain current
I DSS
V DS=20 V, V GS=0 V,
T j=25 °C
-
25 500 µA
V DS=20 V, V GS=0 V,
T j=125 °C
-
4
- mA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=30 A
-
1.4 1.8 mW
V GS=10 V, I D=30 A
- 1.1 1.3
Gate resistance
RG
0.3 0.6 1.2 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
85
170
-S
Rev. 2.4
page 2
2013-02-12


Part Number BSB013NE2LXI
Description n-Channel Power MOSFET
Maker Infineon
PDF Download

BSB013NE2LXI Datasheet PDF






Similar Datasheet

1 BSB013NE2LXI n-Channel Power MOSFET
Infineon





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy