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BSB008NE2LX - n-Channel Power MOSFET

Key Features

  • Optimized for e-fuse and OR-ing.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSB008NE2LX DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,25V BSB008NE2LX 1Description Features •Optimizedfore-fuseandOR-ingapplication •UltralowRdsoninCanPAK-MXfootprint •Lowprofile(<0.7mm) •100%avalanchetested •100%RgTested •Double-sidedcooling •CompatiblewithDirectFET®packageMXfootprintandoutline1) •QualifiedaccordingtoJEDEC2)fortargetapplications CanPAKMX-size Drain Drain Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.8 mΩ ID 180 A Qoss 74 nC Qg(0V..