Click to expand full text
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V BSB008NE2LX
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,25V BSB008NE2LX
1Description
Features
•Optimizedfore-fuseandOR-ingapplication •UltralowRdsoninCanPAK-MXfootprint •Lowprofile(<0.7mm) •100%avalanchetested •100%RgTested •Double-sidedcooling •CompatiblewithDirectFET®packageMXfootprintandoutline1) •QualifiedaccordingtoJEDEC2)fortargetapplications
CanPAKMX-size
Drain Drain
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 25
V
RDS(on),max
0.8
mΩ
ID 180 A
Qoss
74
nC
Qg(0V..