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Infineon Technologies Electronic Components Datasheet

BSB008NE2LX Datasheet

n-Channel Power MOSFET

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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket


Infineon Technologies Electronic Components Datasheet

BSB008NE2LX Datasheet

n-Channel Power MOSFET

No Preview Available !

OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
1Description
Features
•Optimizedfore-fuseandOR-ingapplication
•UltralowRdsoninCanPAK-MXfootprint
•Lowprofile(<0.7mm)
•100%avalanchetested
•100%RgTested
•Double-sidedcooling
•CompatiblewithDirectFET®packageMXfootprintandoutline1)
•QualifiedaccordingtoJEDEC2)fortargetapplications
CanPAKMX-size
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 25
V
RDS(on),max
0.8
m
ID 180 A
Qoss
74
nC
Qg(0V..10V)
258
nC
Gate
Source
Type/OrderingCode
BSB008NE2LX
Package
MG-WDSON-2
Marking
04E2
RelatedLinks
-
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
2) J-STD20 and JESD22
Final Data Sheet
2 Rev.2.0,2015-01-20


Part Number BSB008NE2LX
Description n-Channel Power MOSFET
Maker Infineon
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BSB008NE2LX Datasheet PDF






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