BFY450 transistor equivalent, hirel npn silicon rf transistor.
4
* For Medium Power Amplifiers
* Compression point P-1dB = 19 dBm at 1.8 GHz
Max. available gain Gma = 16dB at 1.8 GHz
* Hermetically sealed microwave pa.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Table 1
Product information
Type
Comment
Pin Configuration
1
2
3
4
BFY450(ES) BFY450(P)1
For flight use
C
E
B
E
Not for flight use1
1 (P) parts have the sam.
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