BFR740L3 Overview
150 Unit V mA mW °C 1 2005-10-17 BFR740L3 Parameter Junction - soldering point1) Symbol RthJS Value ≤ 350 Unit K/W at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
| Part number | BFR740L3 |
|---|---|
| Datasheet | BFR740L3-Infineon.pdf |
| File Size | 133.24 KB |
| Manufacturer | Infineon |
| Description | NPN Silicon Germanium RF Transistor |
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150 Unit V mA mW °C 1 2005-10-17 BFR740L3 Parameter Junction - soldering point1) Symbol RthJS Value ≤ 350 Unit K/W at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
| Part Number | Description |
|---|---|
| BFR740L3RH | Low Noise Silicon Germanium Bipolar RF Transistor |
| BFR720L3RH | NPN Silicon Germanium RF Transistor |
| BFR750L3RH | Linear Low Noise SiGe:C Bipolar RF Transistor |
| BFR193F | Low Noise Silicon Bipolar RF Transistor |
| BFR193L3 | NPN Bipolar RF Transistor |
| BFR840L3RHESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor |
| BFR843EL3 | Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor |