Datasheet4U Logo Datasheet4U.com

BFP740FESD - NPN Transistor

Description

The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.

Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFP740 NPN Silicon Germanium RF Transistor Infineon Technologies AG
BFP740 NPN Transistors Kexin
BFP74F NPN Silicon Germanium RF Transistor Infineon Technologies AG
BFP719 NPN Transistor ETC
BFP720 NPN Transistor ETC

Other Datasheets by Infineon

Part Number Description
BFP740F NPN Transistor
BFP740ESD NPN Transistor
BFP720 NPN RF bipolar transistor
BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor
BFP720F Low Noise Silicon Germanium Bipolar RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BFP740FESD SiGe:C NPN RF bipolar transistor Product description The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits • NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3 V, 25 mA • OIP3 = 23.5 dBm at 5.5 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Published: |