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BFP740FESD
SiGe:C NPN RF bipolar transistor
Product description
The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.
Feature list
• Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
• NFmin = 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 26 dB at 2.4 GHz and Gma = 20.5 dB at 5.5 GHz, 3 V, 25 mA • OIP3 = 23.5 dBm at 5.5 GHz, 3 V, 25 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
BFP740FESD Datasheet
