BFP740F - NPN Transistor

Description

The BFP740F is a wideband NPN RF heterojunction bipolar transistor (HBT).

Low noise figure NFmin = 1 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 21 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial appl

Infineon

📥 Download Datasheet

Datasheet Details

Part number	BFP740F
Manufacturer	Infineon
File Size	521.31 KB
Description	NPN Transistor
Datasheet	BFP740F Datasheet
Additional preview pages of the BFP740F datasheet.

📁 Similar Datasheet

BFP740 - NPN Silicon Germanium RF Transistor (Infineon Technologies AG)
BFP740 - NPN Transistors (Kexin)
BFP74F - NPN Silicon Germanium RF Transistor (Infineon Technologies AG)
BFP719 - NPN Transistor (ETC)
BFP720 - NPN Transistor (ETC)
BFP721 - NPN Transistor (ETC)
BFP722 - NPN Transistor (ETC)
BFP10 - Class A Low Noise (Thomson Semiconductors)
BFP136 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
BFP136 - NPN Silicon RF Transistor (Infineon Technologies AG)

Other Datasheets by Infineon

BFP740FESD - NPN Transistor
BFP740ESD - NPN Transistor
BFP720 - NPN RF bipolar transistor
BFP720ESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor
BFP720F - Low Noise Silicon Germanium Bipolar RF Transistor
BFP720FESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor
BFP750 - High Linearity Low Noise SiGe:C NPN RF Transistor
BFP760 - Low Noise Silicon Germanium Bipolar RF Transistor

Full PDF Text Transcription

Click to expand full text

BFP740F SiGe:C NPN RF bipolar transistor Product description The BFP740F is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • Low noise figure NFmin = 1 dB at 5.5 GHz, 3 V, 6 mA • High gain Gms = 21 dB at 5.5 GHz, 3 V, 15 mA • OIP3 = 24 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Published: Feb 21, 2016 |