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BFP720ESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor

Description

and information available in the data sheet have been expanded and updated.

Features

  • . . 8 3 Maximum Ratings.
  • . . . . 9 4 Thermal Characteristics.
  • . . . 10 5 Electrical Characteristics.

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Datasheet Details

Part number BFP720ESD
Manufacturer Infineon
File Size 1.11 MB
Description Robust Low Noise Silicon Germanium Bipolar RF Transistor
Datasheet download datasheet BFP720ESD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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