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Infineon Technologies Electronic Components Datasheet

BCP69-25 Datasheet

PNP Silicon AF Transistor

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PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCP69-25
43
2
1
Type
BCP69-25
Marking
Pin Configuration
...-25* 1=B 2=C 3=E 4=C -
-
Package
SOT223
* Marking is the same as type-name
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp 10 ms
Base current
Peak base current
Total power dissipation-
TS 114 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
20
25
25
5
1
2
100
200
3
150
-65 ... 150
Unit
V
A
mA
W
°C
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1
Value
12
Unit
K/W
2011-09-19


Infineon Technologies Electronic Components Datasheet

BCP69-25 Datasheet

PNP Silicon AF Transistor

No Preview Available !

BCP69-25
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
DC current gain2)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V, BCP69-16
IC = 500 mA, VCE = 1 V, BCP69-25
IC = 1 A, VCE = 1 V
V(BR)CEO 20
-
-
V(BR)CBO 25
-
-
V(BR)CES 25
-
-
V(BR)EBO 5 - -
ICBO
hFE
- - 0.1
- - 100
50 -
-
100 160 250
160 250 375
60 -
-
Collector-emitter saturation voltage2)
IC = 1 A, IB = 100 mA
Base-emitter voltage2)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VCEsat
VBE(ON)
-
-
-
- 0.5
0.6 -
-1
Unit
V
µA
-
V
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT - 100
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
- MHz
2 2011-09-19


Part Number BCP69-25
Description PNP Silicon AF Transistor
Maker Infineon
Total Page 6 Pages
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