logo

AUIRLR3114Z Datasheet, Infineon

AUIRLR3114Z mosfet equivalent, power mosfet.

AUIRLR3114Z Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 689.71KB)

AUIRLR3114Z Datasheet

Features and benefits


* Advanced Process Technology
* Ultra Low On-Resistance
* Logic Level Gate Drive
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avala.

Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

Image gallery

AUIRLR3114Z Page 1 AUIRLR3114Z Page 2 AUIRLR3114Z Page 3

TAGS

AUIRLR3114Z
Power
MOSFET
Infineon

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts