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AUIRGSL4062D1 - IGBT

Download the AUIRGSL4062D1 datasheet PDF. This datasheet also covers the AUIRGB4062D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • 5µs short circuit SOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode.
  • Tighter Distribution of Parameters.
  • Lead-Free, RoHS Compliant C G E n-channel C VCES = 600V IC(Nominal) = 24A tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.57V C C.
  • Automotive Qualified.
  • Benefits.
  • High Efficiency in a Wide.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRGB4062D1-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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AUIRGS4062D1 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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Other Datasheets by Infineon

Part Number Description
AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR
AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR
AUIRGS4062D1 IGBT
AUIRG4PC40S-E Insulated Gate Bipolar Transistor
AUIRGB4062D1 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  5µs short circuit SOA  Square RBSOA  100% of the parts tested for ILM  Positive VCE (on) Temperature Coefficient.  Ultra Fast Soft Recovery Co-pak Diode  Tighter Distribution of Parameters  Lead-Free, RoHS Compliant C G E n-channel C VCES = 600V IC(Nominal) = 24A tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.
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