AUIRFU540Z mosfet equivalent, power mosfet.
of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an e.
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest process.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.
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