* Advanced Process Technology
* Ultra Low On-Resistance
*175°C Operating Temperature
*Fast Switching
* Repetitive Avalanche Allowed up to Tjmax

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

AUIRFSL4115

AUIRFSL4010

AUIRFSL4310

AUIRFSL4410Z

AUIRFSL3004

AUIRFSL3107

AUIRFSL3206

AUIRFSL3207Z

AUIRFSL3307Z

AUIRFSL3607

AUIRFSL6535

AUIRFSL8403

AUIRFSL8405

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts