AUIRFR8401 datasheet, mosfet equivalent, Infineon

Features and benefits

* Advanced Process Technology
* New Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax .

Application

this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Thi.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design th.

Image gallery