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AUIRF9952Q Key Features

  • Advanced Planar Technology
  • Low On-Resistance
  • Logic Level Gate Drive
  • Dual N and P Channel MOSFET
  • Dynamic dv/dt Rating
  • 150°C Operating Temperature
  • Fast Switching
  • Full Avalanche Rated
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS pliant

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AUIRF9952Q Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide...