AUIRF9952Q
AUIRF9952Q is Dual N/P-Channel MOSFET manufactured by Infineon.
AUTOMOTIVE GRADE
Features
- Advanced Planar Technology
- Low On-Resistance
- Logic Level Gate Drive
- Dual N and P Channel MOSFET
- Dynamic dv/dt Rating
- 150°C Operating Temperature
- Fast Switching
- Full Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
-
S1
N-CHANNEL MOSFET 18
D1
N-CH P-CH
G1 2 S2 3
V7 D1
6 D2
30V -30V
G2 4
5 D2 RDS(on) max. 0.10 0.25
P-CHANNEL MOSFET
Top View
3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other...
