Datasheet4U Logo Datasheet4U.com

AUIRF7739L2TR - Power MOSFET

General Description

The AUIRF7739L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7739L2TR N-Channel MOSFET International Rectifier
AUIRF7739L2TR1 N-Channel MOSFET International Rectifier
AUIRF7732S2TR Power MOSFET International Rectifier
AUIRF7732S2TR1 Power MOSFET International Rectifier
AUIRF7734M2TR Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRF7739L2 Power MOSFET
AUIRF7732S2TR Power MOSFET
AUIRF7734M2TR Power MOSFET
AUIRF7736M2TR Power MOSFET
AUIRF7738L2TR Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE AUIRF7739L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ. max.