AUIRF4104S
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
- Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
HEXFET® Power MOSFET
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
40V 4.3m 5.5m 120A
75A
G Gate
TO-220AB AUIRF4104
D Drain
D2Pak AUIRF4104S
S Source
Base part number AUIRF4104 AUIRF4104S
Package Type TO-220 D2-Pak
Standard...
