AUIRF4104S Datasheet, Infineon

* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalan.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.