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AIMW120R045M1 - Silicon Carbide MOSFET

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Very low switching losses.
  • Threshold-free on state characteristic.
  • IGBT-compatible driving voltage (15V for turn-on).
  • 0V turn-off gate voltage.
  • Benchmark gate threshold voltage, VGS(th)=4.5V.
  • Fully controllable dv/dt.
  • Commutation robust body diode, ready for synchronous rectification.
  • Temperature independent turn-off switching losses Benefits.
  • Efficiency improvement.
  • Enabling higher fr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide  Very low switching losses  Threshold-free on state characteristic  IGBT-compatible driving voltage (15V for turn-on)  0V turn-off gate voltage  Benchmark gate threshold voltage, VGS(th)=4.