6ED003L06-F2 Description
The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device.
6ED003L06-F2 Key Features
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +600 V
- Output source/sink current +0.165 A/-0.375 A
- Insensitivity of the bridge output to negative
- Separate control circuits for all six drivers
- Detection of over current and under voltage supply
- Externally programmable delay for fault clear after over current detection
- 'Shut down' of all switches during error conditions
- Signal interlocking of every phase to prevent crossconduction