*Ultra-fastbodydiode
*Lowgatecharge
*Best-in-classreverserecoverycharge(Qrr)
*ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
*.

suchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoveryc.

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