2N06H5 - Power-Transistor

Infineon

Key Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green package (lead free).
Ultra low Rds(on).
100% Avalanche tested IPB80N06S2-H5 IPP80N06S2-H5 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.2 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2-H5 IPP80N06S2-H5 Package Ordering Code Marking PG-TO263-3-2 SP0002-18162 2N06H5 PG-TO220-3-1 SP0002-.

2N06H5 power-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	2N06H5
Manufacturer	Infineon
File Size	152.50 KB
Description	Power-Transistor
Datasheet	2N06H5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2-H5 IPP80N06S2-H5 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.