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2ED28073J06F - half-bridge gate driver

Product Overview

Infineon

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2ED28073J06F half-bridge gate driver by Infineon - Datasheet Preview — Datasheet preview – 2ED28073J06F

Datasheet Details

Part number	2ED28073J06F
Manufacturer	Infineon
File Size	1.82 MB
Description	half-bridge gate driver
Datasheet	2ED28073J06F Datasheet
Additional preview pages of the 2ED28073J06F datasheet.

Product details

Description

The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

Features

Product summary.
Negative VS transient immunity of 70 V, dV/dt immune.
Lower di/dt gate driver for better noise immunity.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 600 V.
Maximum bootstrap voltage (VB node) of + 625 V.
Integrated bootstrap diode.
Integrated shoot-through protection with built-in dead time.
Integrated short pulse / noise rejection filter on input.
Independent under voltage lockout for both.

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Published: Aug 10, 2020 |