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2ED28073J06F - half-bridge gate driver

Product Overview

Infineon

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2ED28073J06F half-bridge gate driver by Infineon - Datasheet Preview — Datasheet preview – 2ED28073J06F

Datasheet Details

Part number	2ED28073J06F
Manufacturer	Infineon
File Size	1.82 MB
Description	half-bridge gate driver
Datasheet	2ED28073J06F Datasheet
Additional preview pages of the 2ED28073J06F datasheet.

Product details

Description

The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

Product summary.
Negative VS transient immunity of 70 V, dV/dt immune.
Lower di/dt gate driver for better noise immunity.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 600 V.
Maximum bootstrap voltage (VB node) of + 625 V.
Integrated bootstrap diode.
Integrated shoot-through protection with built-in dead time.
Integrated short pulse / noise rejection filter on input.
Independent under voltage lockout for both.

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Published: Aug 10, 2020 |