Datasheet4U Logo Datasheet4U.com

2ED28073J06F - half-bridge gate driver

General Description

The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Key Features

  • Product summary.
  • Negative VS transient immunity of 70 V, dV/dt immune.
  • Lower di/dt gate driver for better noise immunity.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 600 V.
  • Maximum bootstrap voltage (VB node) of + 625 V.
  • Integrated bootstrap diode.
  • Integrated shoot-through protection with built-in dead time.
  • Integrated short pulse / noise rejection filter on input.
  • Independent under voltage lockout for both.

📥 Download Datasheet

Other Datasheets by Infineon

Part Number Description
2ED2104S06F 650V half bridge gate driver
2ED21064S06J 650V high-side and low-side gate driver
2ED2106S06F 650V high-side and low-side gate driver
2ED21084S06J 650V half bridge gate driver
2ED2108S06F 650V half bridge gate driver
2ED21091S06F 650V half bridge gate driver
2ED21094S06J 650V half bridge gate driver
2ED2109S06F 650V half bridge gate driver
2ED2110S06M 650V high-side and low-side gate driver
2ED21814S06J 650V high-side and low-side gate driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2ED28073J06F 2ED28073J06F 600 V half-bridge gate driver with integrated bootstrap diode Features Product summary  Negative VS transient immunity of 70 V, dV/dt immune  Lower di/dt gate driver for better noise immunity  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 600 V  Maximum bootstrap voltage (VB node) of + 625 V  Integrated bootstrap diode  Integrated shoot-through protection with built-in dead time  Integrated short pulse / noise rejection filter on input  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  3.