1EDF5673K - GaN gate driver

Description

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state.

Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed.

Features

Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products).
low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink).
resistor programmable gate current (typ. 10 mA) in steady “on” state.
programmable negative gate voltage to completely avoid spurious turn-on.
Single output supply voltage (typ. 8 V, floating).
Switching behavior independent of duty-cycle (2 "off" voltage levels).

Infineon

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Datasheet Details

Part number	1EDF5673K
Manufacturer	Infineon
File Size	1.41 MB
Description	GaN gate driver
Datasheet	1EDF5673K Datasheet
Additional preview pages of the 1EDF5673K datasheet.

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Full PDF Text Transcription

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GaN EiceDRIVER™ product family Single-channel functional and reinforced isolated gate-drive ICs for high-voltage enhancement-mode GaN HEMTs Features • Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products) – low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink) – resistor programmable gate current (typ. 10 mA) in steady “on” state – programmable negative gate voltage to completely avoid spurious turn-on • Single output supply voltage (typ.

Published: Jul 6, 2022 |