logo

12M2H008 Datasheet, Infineon

12M2H008 mosfet equivalent, 1200v sic mosfet.

12M2H008 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 1.25MB)

12M2H008 Datasheet

Features and benefits


* VDSS = 1200 V at Tvj = 25°C
* IDDC = 144 A at TC = 100°C
* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload opera.

Application


* EV Charging
* Online UPS/Industrial UPS
* String inverter
* General purpose drives (GPD) Product vali.

Description

Pin definition:
* Pin 1 - Gate
* Pin 2 - Kelvin sense contact
* Pin 3…7 - Source
* Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R008.

Image gallery

12M2H008 Page 1 12M2H008 Page 2 12M2H008 Page 3

TAGS

12M2H008
1200V
SiC
MOSFET
Infineon

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts